HOT-ELECTRON MILLIMETER DEVICES.
Abstract
A program is being conducted to explore the application of known hot-carrier effects in semiconductors to the development of new and improved microwave devices. The devices being investigated include modulators, mixers, harmonic generators, and detectors. An experimental technique was developed for measuring the modulation depth of the hot-carrier amplitude modulator at drive frequencies above 0.5 Gc/s. Typically, modulation indices of 60 and 30 percent were obtained at 0.5 Gc/s and 0.75 Gc/s respectively. The hot-carrier InSb mixer exhibited a minimum detectable signal power of -96 dBm at 70 Gc/s with a local-oscillator drive of -4 dBm at 78?K. Third-harmonic power at 210 Gc/s was obtained with a p-type 35 ohm cm Ge hot-carrier unit. Hot-carrier detectors fabricated from 0.5 ohm cm p-type Ge exhibited essentially square-law response for power levels up to 10 mW at 70 Gc/s. The sensitivity of the units is greater than 100 mV/mW. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1965
- Accession Number
- AD0624055
Entities
People
- D. Fleri
- F. Drago
- L Cohen
- R. I. Harrison
- R. Socci