BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS.
Abstract
Measurements were performed on .004 inch dia. N Type Silicon hot carrier detectors. These detectors were 3 to 14 db less sensitive than that predicted by theoretical analysis. Some detectors exhibited a reversal in polarity when the RF power incident on the detector was increased from minimum detectable signal to approximately 10 mw. The rectification phenomena exhibited by these devices can, in some instances, be related to the static E-I characteristics, but generally static considerations are not enough. All hot carrier diodes exhibited some degree of non-linearity. Efforts are being made to detect the sources of non-linearity with the objective of establishing the relationship, if any, between rectification and static characterization. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1965
- Accession Number
- AD0624115
Entities
People
- C. Shulman
- D. Scaringella