CHARACTERISTICS OF GALLIUM ARSENIDE DIODES AS INFRARED RADIATION SOURCES,

Abstract

An investigation of the radiating characteristics of gallium arsenide (GaAs) semiconductor infrared sources, both noncoherent and coherent (laser), was made to determine the progress which has been effected in developing them into practical, infrared sources for Military night-vision applications. The report concludes that these devices show promise, provided that during further research and development, the present rate of progress is maintained, particularly in the area of efficiency and operation at room temperature. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1965
Accession Number
AD0624129

Entities

People

  • Daniel J. Horowitz
  • Steve B. Gibson

Organizations

  • United States Army Engineer Research and Development Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Compounds
  • Compound Semiconductors
  • Efficiency
  • Electromagnetic Radiation
  • Electronics
  • Gallium
  • Gallium Arsenides
  • Infrared Radiation
  • Ionizing Radiation
  • Night Vision
  • Optical Phenomena
  • Radiation
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Software Engineering
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Microelectronics