HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

Abstract

Results are given that were obtained from the use of higher gold diffusion temperatures and a decrease in starting material resistivity, as well as a change in geometry of the three-terminal die. Changes in measurement techniques and conditions are discussed. Summaries of device characteristics are also tabulated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 28, 1965
Accession Number
AD0624153

Entities

People

  • B. G. Burlingame

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Diffusion
  • Electronics
  • Geometry
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Materials
  • Measurement
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Terminals

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems