RESEARCH INVESTIGATIONS IN THE PHYSICAL CHEMISTRY AND METALLURGY OF SEMICONDUCTING MATERIALS.
Abstract
Using commercial grade boron with relatively high impurity concentration and a carbon concentration as high as .8 percent, boron can be prepared with no spectrographically detectable impurities, and a carbon concentration of less than 60 parts per million. Using a crucible-free method a Czochralski crystal of elemental boron was grown which had a monocrystalline structure. These crystals fractured uniformly at an angle 19 degrees to the growth axis. The bar which was 4 inches in length and 5/16 inch in diamter was grown at a rate of one inch per hour under a positive argon pressure equal to one inch of mercury. Growth of boron films on quartz, boron nitride and alumina substrates have been accomplished. Quartz, as a substrate, was not satisfactory. The films on boron nitride were of high n-type conductivity. The ionization energy was .35 ev as compared to a value of .6 ev for high purity crystalline boron. It was determined that these films were very uniformly doped with silicon, and the source of the silicon was the boron nitride. The electrical properties of the film deposited on A1203 were not determined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1961
- Accession Number
- AD0624251
Entities
People
- K. E. Bean
- R. J. Starks