INVESTIGATION OF GERMANIUM DIODES FOR THERMO-PHOTOVOLTAIC ENERGY CONVERTORS.
Abstract
A theoretical solution to the planar P-I-N diode problem has been obtained and V-I curves plotted. Experimentally obtained diodes fit the expected results closely with the result that conversion efficiencies can be calculated quite accurately for planar devices. Back surface junction diodes were fabricated and a method found for obtaining a theoretical solution to the V-I problem; but results have not been obtained for this case. Conversion efficiencies of 2% were obtained at 5 watts sq cm incident intensity (back surface device) even though collection efficiency was less than 50%. By using evaporation techniques, junctions can be placed closer together and efficiencies of 4%5% achieved at 10 watts sq cm. These figures are not corrected for reflectivity and spectral emission of the source below the bandgap. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 15, 1965
- Accession Number
- AD0624313
Entities
People
- Atif Debs
- Bruce D. Wedlock
- Gordon Taylor
- Robert Siegel
Organizations
- Massachusetts Institute of Technology