SEMICONDUCTOR DESIGN EFFECTS ON RADIATION RESISTANCE.
Abstract
The standard 2N708 geometry transistors and the special structures including the PNP transistor fabrication were completed. The entire set of primary photocurrent measurements were completed under conditions where the radiation pulse was long compared to the minority carrier lifetime of the material. This is in contrast to the non-equilibrium measurements made on a few samples and reported during the first quarter. Numerical results are given. Preliminary measurements on bar geometries have proven inconclusive and a repetition of this experiment is planned for the next quarter. The equations describing the steady-state distribution of excess carriers previously derived are further expanded. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1965
- Accession Number
- AD0624509
Entities
People
- Brian D. Gallagher
- Vincent R. Honnold
Organizations
- Hughes Aircraft Company