DIODE, MILLIMETER WAVE TYPE MIXER (3.2 MM).
Abstract
A step by step fabrication procedure for the developmental models is described, starting with the preparation of the gallium arsenide semiconductor chips. This is followed by the procedure for mounting the gallium arsenide chips to the center conductor of the coaxial IF output. The diode's welded junction forming technique is next described. When an electrically good 94 GHz mixer diode is obtained, the integral waveguide diode mount is then hermetically sealed in dry nitrogen using mica windows. The test setups and procedures for making all of the electrical measurements are described. These measurements include the transducer loss, conversion loss, RF VSWR, IF VSWR, LO power, bias voltage and current, and finally crystal noise ratio (including the local oscillator noise contribution). The actual fabrication of the 53 developmental mixer diodes is approximately 70 percent complete at the end of the report period. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1965
- Accession Number
- AD0624512
Entities
People
- R. J. Bauer