HIGH-MOBILITY LOW-MELTING-POINT GROUP III-V COMPOUND SEMICONDUCTORS.
Abstract
Contents: crystal growth of GaSb from non-stoichiometric melts, properties of improved p- and n- type GaSb, solubility, and electrical behavior of Li in GaSb, galvanomagnetic effects in InSb.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1965
- Accession Number
- AD0624562
Entities
People
- A. C. Beer
- F. J. Reid
- R. D. Baxter
Organizations
- Battelle Memorial Institute