DEVELOPMENT OF TRANSISTOR-VARACTOR DIODE CAPABLE OF 5 WATTS OUTPUT AT 2.3 GIGACYCLES.
Abstract
Recently obtained overlay transistor data for devices with surface geometries similar to the proposed device, coupled with advances in photolithographic techniques, have resulted in a redesign of the device surface geometry. This new design, which has resulted in a factor of two increase in emitter-base periphery over the originally proposed structure with no increase in device junction areas, should result in a significant improvement in device performance capability. The benefits associated with this new structure require process improvements, particularly in the area of mask fabrication, photolithographic techniques and diffusion techniques. The required photomasks have been designed and engineering drawings are being prepared. Studies of various photoresist techniques are being evaluated to determine optimum coating, exposure and developing procedures for the new structure. The effects of various diffusion schedules on UHF performance are being investigated using 'unitcell' structure as the experimental vehicle. Diffusion runs are in process to determine the influence of shallow junction depths and thin epitaxial layers on device performance. A stripline package has been designed and piece parts ordered for initial fabrication and evaluation of this case.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0624566
Entities
People
- H. C. Lee
- P. L. Mcgeough