CRYOELECTRIC RANDOM ACCESS MEMORY, PHASE III.
Abstract
A program is discussed for the development of a largecapacity, random-access cryoelectric memory. Theoretical studies were undertaken on the cryoelectric memory. These studies showed that the detailed electrodynamic behavior of continuous film superconducting memories can be specified. It is shown that the most important single parameter is the uniformity of the grain structure in the tin memory film itself. Size variations greater than 2:1 of the microcrystallites of tin forming the memory film will make it practically impossible to build a plane with a uniformity of drive currents that is satisfactory for proper operation in a memory stack. Another important parameter is the geometrical control of the width of the drive and sense lines when other than cavity sensing techniques are used. It is shown that cavity sensing works quite satisfactorily for small structures, but is not usable for large structures. Two expressions were developed from different points of view that give essentially the same answer with regard to the variation in sense signal for cavity sensing structures over a plane. A practically exact solution to the output from a line sense structure is developed, and it is shown that a 1-mV sense signal can reasonably be expected for cryoelectric memory cells of a size such that 10,000 can be put in one square inch. The vortex theory of superconductive memories is fully developed and provides another method of attach in specifying the electrodynamic behavior of continuous film memory planes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1965
- Accession Number
- AD0624606
Entities
People
- L. L. Burns