LOW-NOISE L-BAND TRANSISTOR AMPLIFIER.
Abstract
The report summarizes the work done during the period from 1 March 1965 to 31 May 1965 to design and develop a low-noise L-band amplifier, utilizing germanium planar transistors. The amplifier consists of three stages. Stripline interstages are used to transform the transistor input of one stage to an appropriate load for the preceding stage. The amplifier provides a flat gain, a linear phase shift and a low noise figure in the L-band region (1.2-1.4 GHz). The basic design techniques for the prediction of circuit performance at lower frequencies are valid in the L-band region. The noise figure of the amplifier can approach the theoretical minimum over fairly narrow bands. Future work in microwave characterization will probably be done with 50 ohm source impedances and load terminations on the devices. Further work is necessary to investigate the compromises involved in minimizing noise figure over a much broader bandwidth. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 11, 1965
- Accession Number
- AD0624614
Entities
People
- Leslie W. Read
Organizations
- Texas Instruments