STUDY OF GERMANIUM DEVICES FOR USE IN A THERMOPHOTOVOLTAIC CONVERTER.
Abstract
Experimental cells containing various structural design variations were fabricated and tested. The effects of grid configuration variations and grid material variations on device performance were investigated. An examination of the effect of acceptor concentration variations in the P+ layer of the N on P+ device was made. A study of the optical generation resistivity compromise between decreased resistivity for increased open circuit voltages and curve factors and increased resistivity for increased short circuit currents was initiated. Optical and electrical evaluation was performed on the first group of vendor processed anti-reflection coated devices. The initial experiments involving the determination of the effects of various front surface chemical treatments on the performance and stability of the absorptive device were made. Passivation studies were started to determine the effect of thin front surface diffused layers on the performance and stability of the N on P+ absorptive device. A system for epitaxial deposition of germanium utilizing the iodine disproportionation in a close-spaced transport configuration has been constructed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0624868
Entities
People
- D. P. Crouch
- R. W. Bek