INVESTIGATION OF RADIATION INDUCED SEMICONDUCTOR PROPERTIES IN ORGANIC AND INORGANIC MATERIALS.
Abstract
Phenanthrene was purified by zone-refining methods and the resistivity of the material was determined as a function of temperature. A discontinuity in the resistivitytemperature curve was observed at about 68C for both compressed polycrystalline pellets and single crystals, and this discontinuity was intensified in the purer portions of the material. Various possible explanations are discussed. Attempts to zone-refine low- and high-density polyethylene resulted in a brittle material which cracked on cooling. No segregation of impurities was observed. Electron irradiation of both silicon and selenium solar cells indicated that silicon cells are more resistant to radiation damage than selenium cells. Carrier removal in silicon appears to be responsible for the radiation induced fluctuation in the base resistance and emitter efficiency of silicon transistors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1965
- Accession Number
- AD0624884
Entities
People
- James A. Wall
- Paul A. Andrews
- Sumner Mayburg