PRODUCTION ENGINEERING MEASURE FOR SILICON OVERLAY TRANSISTORS.
Abstract
Progress during the report period consisted of the following: (1) Fabrication of devices using the boron tribromide (BBr3) base diffusion method. Wafers are also in process using a combination of the BBr3 base diffusion and the emitter-gold emitter diffusion. (2) transition to 2-inch masks to give better definition and detail. Mask measurement by precise methods to insure mask accuracy and repeatability. (3) Evaluation of effects of variations in emitter stripe width. (4) Fabrication of wafers using the chemical etch process. (5) Construction of wafer storager cabinet to determine effects of prolonged wafer storage between various process steps. (6) Continued investigation of ultrasonic wire bonding and analysis of the results obtained by ultrasonic bonding to raw kovar top posts. (7) Development of a process evaluation test plan and an environmental step stress test plan. Completion of initial electrical parameter readouts. Evaluation of samples fabricated using the BBr3 base diffusion method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1965
- Accession Number
- AD0625317
Entities
People
- Michael Cassidy
- Paul Greer
Organizations
- Motorola Mobility