TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MC, 100 WATTS PEP.
Abstract
The report contains information concerning the relationship of device design considerations to device operation in single sideband circuits. The requirement for low intermodulation distortion necessitates Class AB biasing, causing the device to operate in a mode where second breakdown and thermal runaway are prevalent. The reduction of second breakdown by the addition of ballast resistors and the use of a temperature compensating diode for bias point control are used to ensure reliable, safe operation. Photomasks have been designed for the 100-Watt, 30-megacycle device. The description of the pattern as well as the actual dimensions are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1965
- Accession Number
- AD0625325
Entities
People
- D. R. Carley
- R. Rosenzweig