HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Abstract
A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making large area diodes either planar or open junction when the penetration of the rectifying junction is greater than 6 microns. The feasibility of selectively etching a dice down to within 2-3 microns of the junction was demonstrated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 27, 1965
- Accession Number
- AD0625420
Entities
People
- Nelson E. Ake