RADIATION DAMAGE IN SILICON SOLAR CELLS FROM 4.6-MEV PROTON BOMBARDMENT.
Abstract
A study was made of the radiation damage in ten types of silicon solar cells as a result of 4.6-Mev proton bombardment. The cells comprised such types as p/n cells, n/p cells with different bulk-resistivities, planar cells, and drift-field cells. A comparative analysis was made of the radiation-induced degradation in these cells as a function of short-circuit current, maximum power output, minority-carrier diffusion length, and photovoltaic spectral response. The p/n cells were found to be more sensitive to radiation damage than any type of n/p cell in this study. In the n/p cells, there is a definite trend toward increasing radiation resistance accompanying increasing values of bulk resistivity, up to 10 ohm-cm. The drift-field solar cells exhibit a further improvement in radiation resistance beyond that of the other types of n/p cells. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1965
- Accession Number
- AD0625440
Entities
People
- R. L. Statler
Organizations
- United States Naval Research Laboratory