EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (SURFACE EFFECTS).
Abstract
Concluding experimental irradiation data were taken on four groups of Silicon bars, each containing five samples ranging in thickness between .003 in. and .012 in. The four groups duplicated surface conditions of mechanical polish, etch, sandblast, and oxide processed into the transistor lots tested in the first two quarters. After irradiation, the effective lifetime of each bar was determined. Surface recombination velocity for each surface treatment was then calculated by plotting 1/effective minority carrier lifetime as a function of 1/c-sq. where c is the bar thickness. The development of the equations for induced photocurrent for the planar configuration was expanded. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1965
- Accession Number
- AD0625533
Entities
People
- Brian D. Gallagher
- Vincent R. Honnold
Organizations
- Hughes Aircraft Company