THE DEVELOPMENT AND EVALUATION OF A BILATERAL TRIODE SWITCH.
Abstract
This report describes the work performed toward the development of an improved bidirectional triode p-n-p-n switch. Qualitative and quantitative descriptions of the operation of the device are given. Calculations of the sheet conductivity of double-erfc-diffused layers and an extensive analysis of the effects of sheet resistance on the lateral current distribution in the two bases of p-n-p-n switch are presented. A model of the heat flow paths within the device is developed and its feasibility as well as its applicability to established computer-performed rating procedures is shown. The concept of commutating dv/dt is developed and its effect on the design of bidirectional triodes is considered. Device assembly techniques are discussed. Data concerning the effects of gold doping on the characteristics of the device, and a discussion of the characteristics of the device, and a discussion of the characteristics of the stateof-the-art samples shipped during the fourth quarter are also presented. The features of the final design are described, especially those bearing on the dynamic properties of the device. Photoresist techniques as employed on this device are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 13, 1964
- Accession Number
- AD0625769
Entities
Organizations
- General Electric