PRODUCTION ENGINEERING MEASURE TYPE 2N2762 FAMILY SILICON ALLOY TRANSISTOR.
Abstract
Data are presented that illustrate an improvement in the secondary breakdown characteristics of the device due to the improved method of junction termination. Improved handling of base assembly and reduction in the thickness of the molybdenum mounting disc are two process improvements developed independently of the contract program but included as additional steps toward reliability improvement. Critical control of the starting material during Phase III of the production run illustrated a definite improvement in the distribution of higher voltage devices. The results presented for the high temperature step-stress test program illustrate an improvement in the reliability of devices fabricated using techniques refined during the course of the contract program when compared to those fabricated using standard procedures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 25, 1965
- Accession Number
- AD0626182
Entities
People
- J. Priest
- R. Harm
- R. J. Pisarcik
Organizations
- Westinghouse Electric Corporation