MILLIMETER-WAVE GENERATION TECHNIQUES.
Abstract
Research was performed on two programs; Task I, millimeter-wave generation using the electro-optical approach; Task II, microwave generation using bulk properties of gallium arsenide by direct conversion from d-c or pulsed sources. Using a PIN structure of the GaAs(x)P(1-x) - GaAs material system, a photodetector has been fabricated that is capable of detecting beat frequencies from a gallium arsenide laser of at least 40 Gc. This heterojunction structure has an 11% phosphide P+ layer for the light incident surface and is compatible with gallium arsenide light sources. Also presented is the investigation into the inefficiency of the 80% phosphide heterojunction structure. The generation of microwave energy (Task II) using bulk properties of gallium arsenide (currently called the 'Gunn effect') is discussed in terms of both large-and-small-signal theory. The large-signal theory involves the concept of moving domains resulting from an electric field controlled negative resistivity. The small-signal theory involves space-charge wave propagation which results in negative resistance effects at the sample terminals. Qualitatively, the effect of carrier transit-time, terminal condition and doping level are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1965
- Accession Number
- AD0626195
Entities
People
- J. Pergola
- M. Gilden
- T. B. Ramachandran
Organizations
- M/A-COM Technology Solutions