EMITTANCE STUDIES OF III-V COMPOUND SEMICONDUCTORS.
Abstract
The report presents a brief discussion of thermal emission and absorption processes, including Planck's radiation function; Kirchhoff's law, which equates the emittance with the absorptance of a sample; and the interrelationships between the emittance, and the transmittance of a sample. Expressions are given for the emittance in three situations: (1) an almost transparent sample; (2) a completely opaque sample; and (3) intermediate situations. Experimental results include direct emittance studies on the III-V compound semiconductors, InP, AlSb, GaAs, GaSb, InAs, InSb, GaP, and AlAs. In addition, certain of the results have been reduced to the intrinsic optical property, the absorption coefficient. In the discussion of results, particular emphasis is given to the fundamental lattice absorption region, known as the reststrahlen frequency, and to multiple-phonon processes. These latter processes result in characteristic absorption spectra, whose features are assigned to certain critical points in the Brillouin zone. As a result, reliable estimates of the phonon dispersion for certain symmetry directions can be made. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 09, 1965
- Accession Number
- AD0626411
Entities
People
- D. L. Stierwalt
- R. F. Potter
Organizations
- Naval Ordnance Laboratory