RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Abstract
New data on the temperature dependence of the vapor pressure of CdSe, determined by a free-sublimation method, yielded improved values for the standard heat and entropy of sublimation of 84 kcal/mole and 51 cal/mole/K respectively. The pressure-temperature projection of the Cd-rich portion of the Cd:Se phase diagram was established by observing the state of CdSe crystals subjected to known temperatures and Cd-pressures. The maximum Cd-pressure with which solid CdSe can be in equilibrium is 16.6 atm. This occurs at a crystal temperature of 1145C. The diffusion constant of Cd in CdSe was found to be 4.4 x 10 to the 11th power sq cm /sec at 904C. This is in approximate agreement with earlier measurements. The thermal expansion coefficients of CdS and CdSe parallel to c were found to be approximately 60% of those perpendicular to c. A complete set of elastic, dielectric, and piezoelectric constants of CdTe at 77K were established. Analysis of Hall effect measurements on ZnTe yields a hole effective mass of 0.60 = .05m and an acceptor ionization energy of 0.155 eV. A hydrogenic acceptor level at approximately 0.05 eV was also found. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1962
- Accession Number
- AD0626533
Entities
People
- G. P. Chotkevys
- J. L. Barrett
- J. M. Jost
- Lebo Shiozawa
- S. S. Devlin