RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Abstract

Vapor-phase growth on oriented seed crystals was emphasized in the Eighth Quarter. A noteworthy accomplishment was the growth of a large twin-free ZnTe crystal by this method. Plastic Deformation of CdS crystals by three-point bending was initiated in this quarter. Early results indicate that slip occurs on (1010) and (1120) planes and that the slip direction is (1120). Rapid deformation occurs above 700C; and the critical resolved shear stress is estimated to be 0.3 kg/sq mm. The system CdSe-ZnSe was investigated and complete solid miscibility is shown to exist between 900 and 1200C. The system ZnS-ZnTe was also investigated and a plausible phase diagram is derived from the X-ray results. The variational method of solving the Boltzmann equation was extended to cover more than one scattering mechanism. Detailed results are presented for mixtures of optical mode and piezoelectric scattering. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 04, 1964
Accession Number
AD0626538

Entities

People

  • J. M. Jost
  • L. R. Shiozawa
  • R. M. Broudy
  • S. S. Devlin

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Equations
  • Phase
  • Phase Diagrams
  • Plastic Deformation
  • Scattering
  • Semiconductors
  • Shear Stresses
  • Silicon Carbide
  • Vapor Phases
  • Variational Methods
  • X Rays

Readers

  • Calculus or Mathematical Analysis
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics