RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Abstract
Experimental work in the Ninth Quarter continued to emphasize vapor-phase crystal growth on oriented seed crystals of CdS. The effects of inert gas and nonstoichiometric vapor in the growth tube are examined. A possible origin of small-angle boundaries is discussed in terms of dislocations resulting from vacancy precipitation during growth. A newly recognized mode of crystal contamination involving vapor transport agents is discussed. Specific examples of epitaxial growth experiments and some of the difficulties encountered are presented. The intrinsic mobility of CdS, CdSe and ZnTe was calculated using a variational method and the results compared with experiment. The agreement was excellent. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 29, 1964
- Accession Number
- AD0626539
Entities
People
- J. M. Jost
- L. R. Shiozawa
- S. S. Devlin