PRODUCTION ENGINEERING MEASURES (PEM) FOR A GERMANIUM MICROWAVE TRANSISTOR.
Abstract
The preproduction phase of the manufacture of a (1.5 GHz to 3.0 GHz) germanium PEM device is progressing satisfactorily. All equipment necessary to manufacture the device has been installed, and is presently being used specifically for the purpose of training PEM personnel. The PEM process flow is described and accumulative yield curves are shown. Life test data on L-78 and L-78A devices after 4000 hours and 5000 hours are shown. Substantial progress was made toward eliminating the failure mode of PEM devices, type L-148 subjected to the soldering heat test. The primary failure mode is electrical opens. The number of devices exhibiting this type of failure mode was reduced by using larger bonding wire. The bonding process is being investigated in order to obtain a bond with sufficient cross-sectional area so as to assure a lasting bond. A complete program was initiated in order to develop techniques for accurately determining the equivalent circuit of the L-148 chip. An approximate equivalent circuit of the L-148 chip is shown in this report. Diffusion and alloy furnaces temperature profiles were obtained and found to be satisfactory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1965
- Accession Number
- AD0626661
Entities
Organizations
- Texas Instruments