ROOM TEMPERATURE LASER DIODES.
Abstract
The performance of pulsed GaAs injection lasers has been studied at repetition rates as high as 30 kc/sec with 80-nsec-wide pulses. Peak power outputs of 10 watts are obtained with 40 A at low repetition rates (0.1 to 10 kc/sec). At 30 kc/sec the power output is 4.5 watts. These results apply to the conventional parallelepiped structure (junction width approx. 0.0075 cm and length 0.025 cm). The experimental results up to 30 kc/sec suggest power outputs of about 1 W at 100 kc/sec, despite some temperature rise with repetition rate indicated by approximate calculations on heating effects. A new 'line diode' structure is described which embodies a large area p-n junction but with a lasing region width of less than 0.0025 cm. An improved performance is expected at high repetion rates from these units. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1965
- Accession Number
- AD0626775
Entities
People
- Aline Akselrad
- George C. Dousmanis
- Herbert Nelson