MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS.

Abstract

The state of development of Gunn effect devices as of the summer of 1965 is reviewed. N-type Gallium Arsenide with resistivity of 10-100 ohm cm has been obtained by the heat treatment of semi-insulating material and the results of preliminary investigation of this material are included. Attempts to make satisfactory ohmic contacts to this material have so far been unsuccessful. The results of several diagnostic experiments on Gunn effect oscillators made of this and lower resistivity materials are presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1966
Accession Number
AD0626829

Entities

People

  • J. M. Woodall
  • N. Braslau
  • T. S. Plaskett

Organizations

  • IBM Thomas J. Watson Research Center

Tags

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Compound Semiconductors
  • Gallium Arsenides
  • Gunn Effect
  • Heat Treatment
  • Materials
  • Metal-Semiconductor Junctions
  • Oscillation
  • Oscillators
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics