A STUDY OF BAND EDGE DISTORTION IN HEAVILY DOPED GERMANIUM.

Abstract

Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1/e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1965
Accession Number
AD0627003

Entities

People

  • Freeman D. Shepherd Jr.

Organizations

  • Air Force Cambridge Research Laboratories

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Diodes
  • Distortion
  • Energy Bands
  • Germanium
  • Impurities
  • Physical Properties
  • Solid State Properties
  • Substrates
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology