HIGH-POWER GALLIUM ARSENIDE LASER DIODES.
Abstract
The essential features in the design, development, and performance of GaAs p-n junction laser diodes with high output in the coherent beam for application in secure communication systems are discussed. After a brief review of device design principles, the technology of wafer preparation, diffusion of extremely planar p-n junctions and the formation of ohmic, low resistance, area contacts developed at this Command is presented. Measurement techniques to determine the performance characteristics of these lasers such as threshold current density, output power, external quantum efficiency, spectral distribution and linewidth of emitted radiation are discussed. Experimental units with a total average power output in the coherent beam of more than three watts corresponding to a quantum efficiency of 15 percent have been made. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1965
- Accession Number
- AD0627084
Entities
People
- K. L. Klohn
- L. Wandinger
Organizations
- United States Army Communications-Electronics Command