DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS.

Abstract

Installation of systems for the deposition of both doped and undoped layers of silicon dioxide was completed. Work on the preparation of substrates containing isolated n and p regions is slightly behind schedule, but some major obstacles were overcome. Preliminary design of the circuit was completed and a discussion of it is included in this report. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1965
Accession Number
AD0627178

Tags

DTIC Thesaurus Topics

  • Circuits
  • Dioxides
  • Electronic Equipment
  • Electronics
  • Elements
  • Group 14 Elements
  • Integrated Circuits
  • Metalloids
  • Semiconductor Devices
  • Silicon
  • Silicon Dioxide
  • Solid State Electronics
  • Substrates
  • Transistors

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