INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Abstract
Tests for transient radiation damage in 6300 ohm-cm, 600 ohm-cm and 27 ohm-cm p-type silicon were made using a photoconductivity method reported previously. It was found that transient effects exist at 600 usec following the electron pulse in the 600 ohm-cm sample. No effect was observed for the 6300 ohm-cm sample after 600 usec, and the results for the 27 ohm-cm sample were inconclusive. The behavior of medium resistivity n- and p-type silicon during and immediately after irradiation by approximately 48 MeV electron pulses was investigated. Irradiations were performed at temperatures from 80K - 300K. The more general results observed are: (1) the long tail decay of the conductivity pulse increases with both pulse size and total exposure on n-type material, but there is no long tail in p-type silicon; (2) saturation time increases nonlinearly with pulse size; (3) response curve shapes vary greatly with temperature. A low-noise system is described which is used in this study of transient radiation effects in silicon. The system allows conductivity and Hall effect voltage transients to be measured on bridge-type silicon samples. A cryostat incorporated in the system allows the sample to be irradiated at any temperature from 100K to 350K. Tests of the equipment were run with the RPI Linac and show that noise signals can be reduced to 100 uV. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1965
- Accession Number
- AD0627392
Entities
People
- A. Robb Frederickson
- H. James Willard Jr.
- James W. Westhead
- John C. Corelli
- Ronald M. Lichtenstein
Organizations
- Rensselaer Polytechnic Institute