Thin Films Formed by Electrochemical Reactions

Abstract

Basic investigations in the residual gas contamination during sputtering and oxidation mechanism have yielded information that contributes to increased process control. Also, the oxidation experiments depict a structure that can be modified to aid in temperature coefficient of resistance control. A process control investigation for fabricating 1000 ohms/sq resistors and >0.35 pF/sq mil2 capacitors on the same silicon substrate has been completed. The results show the yield for the 1000 ohms/sq plus or minus 20 percent tolerance resistive film is 62 percent and for both the resistive and capacitive films, the yield is 38 percent. An etch problem on the 455 KHz amplifier has delayed fabrication of this circuit. The problem has been solved by using a KMER mask to deposit the Ta2O5 dielectric through.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1965
Accession Number
AD0627849

Entities

People

  • Mike Gaze
  • R. Scot Clark

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Capacitors
  • Contracts
  • Electronic Components
  • Film Resistors
  • Films
  • Life Tests
  • Mass Spectrometers
  • Materials
  • Metals
  • Resistors
  • Semiconductors
  • Temperature Coefficients
  • Test Vehicles
  • Thin Film Resistors
  • Thin Films
  • Vacuum
  • X Rays

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.