HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS (CAPACITORS).

Abstract

The deposition rate of hafnium films by cathodic sputtering under the experimental conditions has been determined. For a sputtering time from 0 to 15 minutes an average deposition rate of 330 A/min has been determined. A large number of hafnium/hafnium dioxide/aluminum capacitors were fabricated by wet and plasma anodization processes. Results on capacitance per unit area, dissipation factor, and uniformity are presented. Tests on maximum breakdown strength of hafnium dioxide films have been performed with aluminum and gold as counter electrodes. Preliminary results on the rate of anodization of hafnium dioxide films and on the dielectric constant are presented. A thin film masking technique has been developed utilizing water soluble materials. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1965
Accession Number
AD0628130

Entities

People

  • F. Huber
  • W. Witt

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Anodizing
  • Capacitance
  • Capacitors
  • Dielectric Permittivity
  • Dissipation
  • Dissipation Factor
  • Films
  • Materials
  • Materials Processing
  • Photoelectrochemical Cells
  • Sputtering
  • Thin Films
  • Water Soluble Materials

Readers

  • Nanofabrication and Microfabrication.
  • Plasma Physics.
  • Powder metallurgy of Titanium alloys.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene