DIFFUSION STUDIES IN REFRACTORY MATERIALS.

Abstract

Results of studies of diffusion in a ceramic oxide are described. The objectives of the program are to (1) determine the origin of enhanced grain-boundary diffusion, (2) determine the effect, if any, of imposed stress on diffusion rates in single-crystals, and (3) determine diffusion rates for impurity cations whose segregation and precipitation is known to influence transport and mechanical properties. Magnesium oxide has been selected for study as a typical ceramic oxide. Grain boundary diffusion has been observed in certain bicrystals and polycrystal-line specimens. The effect, however, is extrinsic in nature, and has been shown to arise from segregation, at grain boundaries, of the principal impurities contained within the MgO. No enhancement of Ni(2+) diffusion rates is observed in MgO subjected to four-point loadings of up to 5000 psi at temperatures between 1000 and 1300C. Similarly, no enhancement is noted in MgO subjected to compressive loads up to 15,000 psi at 1200C. Diffusion data obtained for Ca(2+) in single-crystal MgO may be described by an activation energy of 3.3 electron volts, and a value of D sub o equal to .025 sq cm/sec. Diffusion of Ca(2+) is up to two orders of magnitude slower than for other divalent impurity cations, and the present results may be influenced by fluorescence effects in the microprobe analysis, or by incompletely resolved immiscibility-gap discontinuities in the concentration profiles. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1966
Accession Number
AD0628610

Entities

People

  • B. J. Wuensch
  • T. Vasilos

Tags

DTIC Thesaurus Topics

  • Boundaries
  • Crystals
  • Diffusion
  • Grain Boundaries
  • Heat Of Activation
  • Impurities
  • Magnesium
  • Magnesium Compounds
  • Materials
  • Mechanical Properties
  • Refractory Materials
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics