STRUCTURES FOR 300-WATT, 400MHZ UHF POWER TRANSMISSION.
Abstract
The effect of collector capacitance, both voltage fixed and voltage variable, on the performance of RF transistors is discussed. Two methods for reducing this capacitance are described; (1) the use of integral leads to reduce the fixed bonding pad capacitance and (2) N(+) conductance plugs to reduce depletion layer capacitance by permitting the use of higher resistivity starting material Data are given on the performance of paralleled transistors in a cavity structure, and the problems associated with paralleling of transistors are considered. Power output measurements are given on low and medium power RF transistors connected in a Darlington configuration. The necessary circuit modifications are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0628712
Entities
People
- F. Katnack
- R. Minton