HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.

Abstract

A planar silicon dioxide passivated diode has been designed and fabricated for the EBM tube. The typical reverse electrical characteristics of the diode are a reverse voltage breakdown of 700-1000 volts with a maximum reverse leakage current of 3 micro amps at 600 volts reverse bias. The starting material is 'N' float zone bulk silicon with a resistivity in the range 70-125 ohms-cm. Some difficulty was encountered in making a diode with a reverse voltage breakdown of 700 volts with starting material below approximately 125 ohms-cm. However, it has been demonstrated that diodes with reverse voltage breakdowns of greater than 700 volts can be made with starting material of 60 ohms-cm. Lower starting resistivity material provides a lower parasitic resistance in the device during the conduction cycle. It has been demonstrated that these diodes will remain good for extended periods under environmental conditions simulating the inside of a vacuum tube. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 27, 1966
Accession Number
AD0628858

Entities

People

  • Nelson E. Ake

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Dioxides
  • Electrical Equipment
  • Electron Tubes
  • Electronic Equipment
  • Electrons
  • Films
  • Klystrons
  • Materials
  • Microwave Equipment
  • Microwave Tubes
  • P-N Junctions
  • Power Amplifiers
  • Silicon
  • Silicon Dioxide

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics