PHYSICAL EVALUATION OF THIN FILMS OF SOLID STATE MATERIALS.
Abstract
Characterization of the crystallinity and structural morphology of several high purity electronics-oriented materials has been carried out by light microscopy and X-ray and electron diffraction methods. These materials include vapor deposited thin films of boron and boron phosphide on single crystal silicon substrates via halide reduction, electrodeposits of copper onto single crystal copper substrates, thin films of carbon deposited onto quartz via pyrolysis of various hydrocarbons and zonerefined, polycrystalline phenanthrene. The results of structural characterization have been compared to the preparation procedures in an effort to establish optimum conditions for preparing large area, high perfection, single crystal films appropriate for electronic and optical property measurements by other workers and to determine the effect of impurity upon resultant film perfection. Precision lattice parameters have been determined for ultrapure phenanthrene, which has a monoclinic structure. These are a = 8.47 44A, b =6.1720A, c = 9.4805A, alpha = 98 deg 01 min. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1966
- Accession Number
- AD0629061
Entities
People
- E. T. Peters
- I. Grierson
- S. A. Kulin