TECHNOLOGY FOR PNP INTEGRATED CIRCUITS.
Abstract
The report describes the materials used and the facilities, techniques, and processes which were developed in an effort to fabricate experimental monolithic silicon PNP integrated circuits. The following processes are described: thermal polish, N-type phosphorous isolation diffusion, N-type antimony base and resistor diffusion, N(+) phosphorous contact diffusion, P-type boron emitter, guard ring and collector contact diffusion, photolithography, microphotography, aluminum metallizing, chip mounting, and nail-head thermocompression bonding. The facilities are described, the experimental circuits are shown schematically, and the procedures used in fabricating a circuit are also given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0629126
Entities
People
- Alex Rogel
- Armand P. Larocque
- Gordon Mcneil
- Nicholas O. Korolkoff
- Vincent E. Rible
Organizations
- United States Army Communications-Electronics Command