FIELD EFFECT MEASUREMENTS ON THE A AND B (111) SURFACES OF INDIUM ANTIMONIDE.
Abstract
Large signal alternating current field effect experiments have been performed at 113K on the A and B (111) 'real' surfaces of InSb exposed to different ambients. Discrete fast surface states were observed near the valence as well as the conduction band edge on both types of surfaces. The discrete state near the conduction band edge exhibited essentially the same density on the A and B surfaces, while the state near the valence band edge was found to be more dense on the B surface. In all cases, both surfaces were p-type, the B surface being invariably more p-type than the A surface. A model is presented according to which the surface state near the conduction band edge is acceptor-like and characteristic of the In atom while the surface state near the valence band edge is also acceptor -like but characteristic of the Sb atom. This model is consistent with the Gatos-Lavine model of the polar surfaces of the III-V compounds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1966
- Accession Number
- AD0629200
Entities
People
- Howard Huff
- Shinji Kawaji
Organizations
- Massachusetts Institute of Technology