DEVELOPMENT OF A 50-WATT, 80-MC LINEAR AMPLIFIER TRANSISTOR.
Abstract
The report describes the work performed in the development and fabrication of a linear amplifier transistor that achieved the contract goals of 50 watts PEP at 80 megacycles, with 10 dB power gain and -23 dB intermodulation distortion. The transistor has built-in second breakdown protection, which has been achieved by incorporating ballast resistance in each emitter site of the overlay structure. Furthermore, a temperature compensating diode has been placed inside the transistor package to provide Class AB bias point control. The package is a small, lightweight TO-60, with the emitter grounded to the case. The third terminal is used for the diode. The transistor is capable of dissipating in excess of 75 watts and has a typical thermal resistance of 2C/watt. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0629246
Entities
People
- R. Rosenzweig
- Z. F. Chang