PRODUCTION ENGINEERING MEASURE FOR IMPROVEMEMENT OF PRODUCTION TECHNIQUE TO INCREASE THE RELIABILITY FOR PNP INTERMEDIATE POWER SILICON PLANAR SWITCHING TRANSISTORS INCLUDING 2N3502.
Abstract
Since the first report, a number of parameters controlling the growth of silicon dioxide have been investigated in more detail. This has led to a temperature control technique problem and to the discovery of very fine surface pitting of the silicon, which is peculiar to oxide deposition by this technique. Investigation of the latter difficulty, which has caused a good deal of concern, and the development of a temperature control technique during oxide deposition, have caused the project to be about one month behind schedule. However, these divergencies from the original PERT were not foreseen and the delay is considered reasonable. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1965
- Accession Number
- AD0629286
Entities
People
- D. Floyd
- G. Potts
- J. Diepeveen
- Natalie Walker
- W. Mckeown