JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,

Abstract

Some results of Zn-diffusion in Ga(As(1-x)P(X)) and their effects on laser junctions are summarized. Pulsed operation of Ga(As(1-x)P(X)) lasers to temperatures beyond 200K is described. Self-oscillation phenomena (instabilities) in bulk n-type Si counter-doped with Au or Co are discussed briefly. These oscillations occur at typically 1 Mc or lower frequencies in Co-compensated Si and to well above 100 Mc in Au-compensated Si. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1965
Accession Number
AD0629689

Entities

People

  • C. J. Nuese
  • G. Stillman
  • J. S. Moore
  • M. D. Sirkis
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Diffusion
  • Electronics
  • Frequency
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Instability
  • Oscillation
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science
  • Physics

Readers

  • Control Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics