PRODUCTION ENGINEERING MEASURE FOR IMPROVEMENT OF PRODUCTION TECHNIQUE TO INCREASE THE RELIABILITY FOR PNP INTERMEDIATE POWER SILICON PLANAR SWITCHING TRANSISTORS INCLUDING 2N3502.
Abstract
Work specified for completion by the end of this report period includes sending a series of runs of 3517 material (silicon, epitaxial wafers used to make 2N3502 transistors) to the process development line for evaluation. Preliminary results indicated mixed findings with some of the material producing bad devices; however, overall indications were favorable. The cause for the defective devices was not established. It was decided to produce two more runs of 50 slices each -- 50 slices with 10,000A of SiO2, and 50 slices with an initial coating of 1,000A of deposited oxide. The latter was subsequently thermally oxidized to provide an overall oxide thickness of 10,000A. Both groups of material are in the process of being thoroughly evaluated by the process development group. At the present, it is felt that the deposition of a thick layer of SiO2 on silicon is not conducive to present production epi systems, since the residues of the process pose a major cleaning problem. A thin passivating layer of 1000A seems to be the best alternative.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1965
- Accession Number
- AD0629717
Entities
People
- A. Schifrin
- D. Floyd
- J. Diepeveen
- J. Knudsen
- Natalie Walker