THE MEASUREMENT OF BORON AND OTHER IMPURITIES IN SEMICONDUCTOR MATERIALS BY MASS SPECTROMETRY.
Abstract
A study was made of certain factors influencing the performance of mass spectrographs as tools for the chemical analysis of metals and semiconductors. Special emphasis was given to R-f spark, gas, and sputtering ion source design, problems of electron multiplier detection with the R-f source, direct electronic species-ratio determination techniques, vacuum problems, and the attainment of high abundance sensitivity. A 'breadboard' analytical mass spectrograph embodying recommendations resulting from this study was designed and constructed and the components built on the basis of the study were tested with this. This spectrograph employs a short-path-length ion-optic configuration with approximate second-order focusing proposed by Hintenberger and Konig. The spectrograph is designed so as to comprise the first section of a tandem ion-analysis system designed to be used for analyses requiring a higher abundance sensitivity than can be achieved with a single-stage spectrograph. The single-exposure mass range of the spectrograph is M to above 15M (for example m/e 1-15, 10-150, etc.).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1962
- Accession Number
- AD0629999
Entities
People
- L. F. Herzog
- P. Deines
- T. J. Eskew
Organizations
- Pennsylvania State University