ON THE INFLUENCES OF CHANGES OF CARRIER DENSITY ON THE CURRENT FLOW IN A CHANNEL

Abstract

A study was made of the effect of varying the density of free charge carriers in a semiconductor channel under the influence of a retarding field. It was found that the conditions required for charge binding in the space-charge region are dramatically altered by changes in the distribution of charge. The transconductance per unit current is also drastically altered. Based on the study, it can be presumed that significantly more efficient field effect transistors can be built than have been obtained to date.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1965
Accession Number
AD0630064

Entities

People

  • Keats A. Pullen Jr.
  • Lee Evans

Organizations

  • Ballistic Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Calculus Of Variations
  • Charge Carriers
  • Charge Density
  • Dielectric Permittivity
  • Electric Fields
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Engineering
  • Field Effect Transistors
  • Military Research
  • New Jersey
  • New York
  • Semiconductors
  • Space Charge

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Molecular and genetic basis of cancer.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster