PRODUCTION ENGINEERING MEASURE (PEM) FOR SILICON VARACTOR DIODE.

Abstract

Group B tests, were completed on units from the Second Engineering Test Sample Run. Process changes were made during the quarter to incorporate the use of silicon junctions of the planar structure for the Third Engineering Test Sample Run as opposed to the mesa structure used for fabrication of units in the first two runs. Preliminary tests on units from the third run indicate considerable improvement particularly in regard to thermal resistance characteristics, uniformity of parameter distributions, and ability to withstand high temperature storage testing. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1965
Accession Number
AD0630196

Entities

People

  • G. Bowne
  • R. Bayliss

Organizations

  • Sylvania Electric Products

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Diodes
  • Engineering
  • Fabrication
  • High Temperature
  • Material Forming Processes
  • Planar Structures
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Resistance
  • Thermal Resistance
  • Varactor Diodes

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering