CURRENT-VOLTAGE CHARACTERISTICS OF THIN -FILM DIODES
Abstract
The current-voltage (I-V) characteristics of thin-film diodes were measured at 4.2K, 77K, and room temperature. Superconductive tunneling was achieved with a diode consisting of aluminum, aluminum oxide, and lead (Al/ Al2O3/Pb). In the nonsuperconducting state the Al/Al2O3/Pb type of thin-film diode exhibited Zener breakdown between 1.5 and 3.5 volts. However, the Al/ Al2O3/Pb diodes did not have reproducible I-V characteristics, and the nonsuperconducting Al/Al2O3/Pb diode could not be operated with AC voltage long enough to serve as a practical electronic device. A thin-film diode consisting of aluminum, aluminum oxide, manganese, and lead exhibited power -law I-V characteristics at ambient temperatures, under 60-cycle excitation, and could be operated with a reproducible I-V characteristic for several hours. Bistable switching was achieved with a thin-film diode consisting of aluminum, aluminum oxide, lead, and aluminum; in this diode the short-circuit state was produced by a high-voltage pulse and the open-circuit state by a low-voltage pulse. A theoretical analysis of the observed I-V characteristic is presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0630587
Entities
People
- R. D. Hitchcock
Organizations
- Naval Facilities Engineering Service Center