INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Abstract
A contactless method was developed for measuring induced photoconductivity in silicon. The method was used to search for transient radiation damage effects in silicon specimens irradiated by short bursts of high energy electrons. The investigation showed that transient radiation damage in silicon at room temperature is a minor effect when compared with permanent damage if the damage is assessed by way of the decay time of induced photoconductivity. No transient damage (as opposed to permanent damage) survives to 1.3 milliseconds after the instant when the damage is produced. Transient radiation damage experiments indicate that in p-type silicon the transient Hall and conductivity voltages decay in about 20-50 microseconds. Relatively long saturation times (about 10 to 100 microseconds) are observed in the transient Hall and conductivity voltage following an electron burst. The saturation time decreases with dose accumulation and also decreases as the irradiation temperature of the sample is decreased. Very similar effects also are observed in n-type silicon samples. In both n- and p-type silicon the Hall and conductivity voltages decay with about the same time constant.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0630701
Entities
People
- Arthur R. Frederickson
- H. James Willard Jr.
- James W. Westhead
- John C. Corelli
- Roland M. Lichtenstein
Organizations
- Rensselaer Polytechnic Institute